[简介] 基于人工智能技术与业务对数据通信网络的需求，分析现有网络面向数据入算、智算中心互联、大规模AI训练3类场景时存在的问题，阐述“入算”“算内”“算间”网络关键技术创新情况，包括“入算”网络的业务创新探索，“算内”网络围绕架构以太网技术等多方面的革新，以及“算间”网络从IT、IP、光层开展的技术改进，并提出包含运营层、网络管控层、业务连接层、物理网络层的4层网络架构以优化数据通信网络。认为合理推动产业发展需有序规划标准化研究工作，递进式开展关键技术试点验证。

[简介]总结了传输控制协议/因特网互联协议（TCP/IP）分布式架构、无连接传输、尽力而为的服务模型、端对端通信模型和开放性5大基本特征，指出这些特征是TCP/IP优于其他网络协议的根本原因。针对新的网络需求，分析这些特征的异化。指出在当前快速变化的技术环境中，TCP/IP作为互联网的基石，其核心思想依然具有重要意义。要充分利用互联网协议第6版（IPv6）的机遇，努力创新以适应人工智能等新技术发展带来的挑战。

[Introduction] A solar-blind multi-quantum well (MQW) structure wafer based on AlGaN materials is growth by metal-organic chemical vapor deposition (MOCVD). The monolithically integrated photonic chips including light-emitting diodes (LEDs), waveguides, and photodetectors (PDs) are presented. The results of the finite-difference time-domain (FDTD) simulation confirm the strong light constraint of the waveguide designed with the triangular structure in the optical coupling region. Furthermore, in virtue of predominant ultraviolet transverse magnetic (TM) modes, the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip. The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs. When the LEDs are operated at 100 mA current, the photo-to-dark current ratio (PDCR) of the integrated PD is about seven orders of magnitude. The responsivity, specific detectivity, and external quantum efficiency of the integrated self-driven PD are 74.89 A/W, 4.22×1013 Jones, and 3.38×104%, respectively. The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great application potential in large-scale on-chip optical communication in the future.

[Introduction] With the advancement of photonic integration technology, ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in fields such as precision measurement, quantum communication, and atomic clocks. This review summarizes the latest developments in integrated photonics for achieving ultra-low linewidth lasers, particularly breakthroughs made through the integration of Brillouin lasers. We discuss the design principles, manufacturing processes, performance characteristics, and potential value of these lasers in various applications.