编委动态

编委简介

个人简介
张卫，男，1968年5月出生，教授、博士生导师，复旦大学微电子学院院长。是国务院特殊津贴获得者，教育部新器件创新团队负责人。曾先后担任上海市电子学会副理事长、“长三角集成电路设计与制造协同创新中心常务副主任”、“极大规模集成电路制造装备及成套工艺”国家重大专项总体组技术副总师、复旦大学校学术委员会副主任等
个人履历
学习简历
1984年9月-1988年7月，西安交通大学电气系本科生
1988年9月-1991年6月，西安交通大学电气系硕士研究生
1991年9月-1995年6月，西安交通大学学习电气系博士研究生
工作简历

1995年6月-1997年5月，复旦大学电子工程系博士后
1997年5月-1999年4月，复旦大学电子工程系副教授
1999年5月晋升为教授
2001年1月-2002年5月，德国TU-Chemnitz访问学者(洪堡学者)
2008年7月-2008年8月，德国莱布尼茨-汉诺威大学访问学者(洪堡短期访问学者)
2007年6月-2013年4月，复旦大学微电子学系系主任
2013年4月起任复旦大学微电子学院副院长
2017年9月起任复旦大学微电子学院执行院长
社会兼职

《半导体学报》副主编
国家集成电路创新中心副主任
工信部通信科学技术委员会委员
教育部科技委信息学部委员
学术研究
主要从事集成电路工艺、半导体新器件和半导体材料的研究。自1997年以来承担国家863、国家自然科学基金、国家重大科技专项、上海市重大重点项目等20多项。自1992年以来在Science，Nature Nanotechnology, Nature Materials, Applied Physics Letters，IEEE Electron Device Letters，IEEE Tran. on Electron Devices,IEDM等国际学术期刊和会议上发表论文300多篇，申请专利180多项，其中美国专利39项。
获奖和荣誉
1. 1999年上海市高校优秀青年教师
2. 2002年教育部自然科学二等奖
3. 2012年北京市科技进步一等奖
4. 2014年上海市技术发明二等奖
5. 2016年中国电子学会科学技术奖一等奖
6. 2016年上海市科技进步二等奖
7. 2017年国家技术发明二等奖
论文/著作发表情况
1. Liu Chunsen, Chen Huawei, Hou Xiang, Zhang Heng, Han Jun, Jiang YuGang, Zeng Xiaoyang, Zhang David Wei, Zhou Peng, Small footprint transistor architecture for photo-switching logic and in situ memory, Nature Nanotechnology, vol.14, 2019/7/1 
2. Li Jingyu, Liu Lan, Chen Xiaozhang, Liu Chunsen, Wang Jianlu, Hu Weida, Zhang David Wei, Zhou Peng, Symmetric Ultrafast Writing and Erasing Speeds in Quasi-Nonvolatile Memory via van der Waals Hetero-structures, Advanced Materials, vol.31, 2019/03/15 
3. Wang Shuiyuan, Chen Chunsheng, Yu Zhihao, He Yongli, Chen Xiaoyao, Wan Qing, Shi Yi, Zhang David Wei, Zhou Hao, Wang Xinran, Zhou Peng, A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility, Advanced Materials, vol.31, 2019/01/18 
4. Zhang Min, Li Han, Xu Jing, Zhu Hao, Chen Lin, Sun Qingqing, Zhang David Wei, High Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications, IEEE Electron Device Letters, vol.40, 2019/1/1  
5. Zhang Heng, Li Chao, Wang Jianlu, Hu Weida, Zhang David Wei, Zhou Peng, Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS2/WSe2 Gate, Advanced Functional Materials, vol.28, 2018/10/31  
6. Sun ShunMing, Liu Wen Jun, Wang YongPing, Huan YaWei, Ma Gan, Zhu Bao, Wu SuDong, Yu WenJie, Horng RayHua, Xia ChangTai, Sun QingQing, Ding ShiJin, Zhang David Wei, Band alignment of In2O3/betaGa2O3 interface determined by X-ray photoelectron spectroscopy, Applied Physics Letters, vol.113, 2018/07/16  
7. Xue KanHao, Su HaiLei, Li Yi, Sun HuaJun, He WeiFan, Chang TingChang, Chen Lin, Zhang David Wei, Miao XiangShui, Model of dielectric breakdown in hafniabased ferroelectric capacitors, Journal of Applied Physics, vol.124. 2018/07/14  
8. Chen JinXin, Tao JiaJia, Ma HongPing, Zhang Hao, Feng JiJun, Liu WenJun, Xia Changtai, Lu HongLiang, Zhang David Wei, Band alignment of AlN/betaGa2O3 heterojunction interface measured by x-ray photoelectron spectroscopy, Applied Physics Letters, vol.112, 2018/06/25  
9. Nie XinRan, Zhang Min, Zhu Hao, Chen Lin, Sun QingQing, Zhang David Wei, Thickness Dependence of Low-Frequency Noise in MoS2 Field Effect Transistors With Enhanced Back Gate Control, IEEE Electron Device Letters, vol.39, 2018/5/1  
10. Liu Chunsen, Yan Xiao, Song Xiongfei, Ding Shijin, Zhang David Wei, Zhou Peng, A semi-floating gate memory based on van der Waals heterostructures for quasi-nonvolatile applications Nature Nanotechnology, vol.13, 2018/5/1 
11. Yan Xiao, Zhang David Wei, Liu Chunsen, Bao Wenzhong, Wang Shuiyuan, Ding Shijin, Zheng Gengfeng, Zhou Peng, High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures, Advanced Science, vol.5, 2018/4/1 
12. Yu LinJie, Wang TianYu, Chen Lin, Zhu Hao, Sun QingQing, Ding ShiJin, Zhou Peng, Zhang David Wei, Stateful Logic Operations Implemented With Graphite Resistive Switching Memory, IEEE Electron Device Letters, vol.39, 2018/4/1 
13. Li Jing, Zhou Jiuren, Han Genquan, Liu Yan, Peng Yue, Zhang Jincheng, Sun QingQing, Zhang David Wei, Hao Yue, Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx, IEEE Transactions on Electron Devices, vol.65, 2018/3/1 
14. Jiang Jun, Bai Zi Long, Chen Zhi Hui, He Long, Zhang David Wei, Zhang Qing Hua, Shi Jin An, Park Min Hyuk, Scott James F., Hwang Cheol Seong, Jiang An Quan, Temporary formation of highly conducting domain walls for nondestructive readout of ferroelectric domain wall resistance switching memories, Nature Materials, vol.17, 2018/1/1 
15. Yuan Kaiping, Cao Qi, Li Xinyu, Chen HongYan, Deng Yonghui, Wang YuanYuan, Luo Wei, Lu HongLiang, Zhang David Wei, Synthesis of WO3@ZnWO4@ZnOZnO hierarchical nanocactus arrays for efficient photo-electro-chemical water splitting, Nano Energy, vol.41, 2017/11/1  
16. Li Jing, Zhou Jiuren, Han Genquan, Liu Yan, Peng Yue, Zhang Jincheng, Sun QingQing, Zhang David Wei, Hao Yue, Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs, IEEE Electron Device Letters , vol.38, 2017/10/1   
17. Zhou Jiuren, Han Genquan, Peng Yue, Liu Yan, Zhang Jincheng, Sun QingQing, Zhang David Wei, Hao Yue Ferroelectric Negative Capacitance GeSn PFETs with Sub20 mV/decade Subthreshold Swing, IEEE Electron Device Letters, vol.38, 2017/8/1 
18. Qian ShiBing, Shao Yan, Liu WenJun, Zhang David Wei, Ding ShiJin, Erasing Modes Dependent Performance of aIGZO TFT Memory with Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer, IEEE Transactions On Electron Devices, vol.64, 2017/7/1 
19. Xu Jing, Chen Lin, Dai YaWei, Cao Qian, Sun QingQing, Ding ShiJin, Zhu Hao, Zhang David Wei, A two-dimensional semiconductor transistor with boosted gate control and sensing ability, Science Advances, vol.3, 2017/5/1 
20. Wang Xiao, Zhang TianBao, Yang Wen, Zhu Hao, Chen Lin, Sun QingQing, Zhang David Wei, Improved integration of ultrathin highk dielectrics in fewlayer MoS2 FET by remote forming gas plasma pretreatment, Applied Physics Letters, vol.110, 2017/01/30 
21. Peng Bo, Zhang Hao, Shao Hezhu, Lu Hongliang, Zhang David Wei, Zhu Heyuan; High thermoelectric performance of Weyl semimetal TaAs, Nano Energy, vol. 30, 2016/12/1
22. Wang DaTing, Dai YaWei, Xu Jing, Chen Lin, Sun QingQing, Zhou Peng, Wang PengFei, Ding ShiJin, Zhang David Wei; Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices with Embedded Ag Nanoparticles, IEEE Electron Device Letters, vol.37, 2016/7/1
23. Zheng LiLi, Ma Qian, Wang YouHang, Liu WenJun, Ding ShiJin, Zhang David Wei ; High Performance unannealed aInGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator, IEEE Electron Device Letters , vol. 37, 2016/6/1
24. Wang YouHang, Ma Qian, Zheng LiLi, Liu WenJun, Ding ShiJin, Lu HongLiang, Zhang David Wei; Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 ThinFilm Transistors by Low Temperature Annealing in Air, IEEE Transactions on Electron Devices, vol. 63, 2016/5/1
25. Zhang WenPeng, Qian ShiBing, Liu WenJun, Ding ShiJin, Zhang David Wei; Novel MultiLevel Cell TFT Memory with an InGaZnO Charge Storage Layer and Channel , IEEE Electron Device Letters, vol. 36, 2015/10/1
26. Zhang LinQing, Shi JinShan, Huang HongFan, Liu XiaoYong, Zhao ShengXun, Wang PengFei, Zhang David Wei; Low Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing, IEEE Electron Device Letters, vol. 36, 2015/9/1
27. Zhu Bao, Liu WenJun, Wei Lei, Zhang David Wei, Jiang Anquan, Ding ShiJin; Voltage linearity modulation and polarity dependent conduction in metal insulator metal capacitors with atomic layer deposited Al2O3/ZrO2/SiO2 nano-stacks, Journal of Applied Physics, vol. 118, 2015/7/7
28. Lin Xi, Liu XiaoYong, Zhang ChunMin, Liu Lei, Shi JinShan, Zhang Shuai, Wang WenBo, Bu WeiHai, Wu Jun, Gong Yi, Wang PengFei, Wu HanMing, Zhang David Wei; Investigation of Temperature Dependence Device Scalability and Modeling of Semi-floating Gate Transistor Memory Cell, IEEE Transactions On Electron Devices, vol. 62, 2015/4/1